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T-CAD analysis of electric fields in n-in-p silicon strip detectors in dependence on the p-stop pattern and doping concentration (2015)

First Author: Printz M

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1748-0221/10/01/c01048

Publication URI: http://dx.doi.org/10.1088/1748-0221/10/01/c01048

Type: Journal Article/Review

Parent Publication: Journal of Instrumentation

Issue: 01

ISSN: 1748-0221