Recombination centers in 4H-SiC investigated by electrically detected magnetic resonance and ab initio modeling (2016)
Attributed to:
MATERIALS CHEMISTRY HIGH END COMPUTING CONSORTIUM
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4948242
Publication URI: http://dx.doi.org/10.1063/1.4948242
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 18