Single Step Solution Processed GaAs Thin Films from GaMe 3 and t BuAsH 2 under Ambient Pressure (2016)
Attributed to:
MATERIALS CHEMISTRY HIGH END COMPUTING CONSORTIUM
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/acs.jpcc.6b00850
Publication URI: http://dx.doi.org/10.1021/acs.jpcc.6b00850
Type: Journal Article/Review
Parent Publication: The Journal of Physical Chemistry C
Issue: 13