Single Step Solution Processed GaAs Thin Films from GaMe 3 and t BuAsH 2 under Ambient Pressure (2016)

First Author: Sathasivam S
Attributed to:  MATERIALS CHEMISTRY HIGH END COMPUTING CONSORTIUM funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acs.jpcc.6b00850

Publication URI: http://dx.doi.org/10.1021/acs.jpcc.6b00850

Type: Journal Article/Review

Parent Publication: The Journal of Physical Chemistry C

Issue: 13