Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs (2015)

First Author: Waller W

Attributed to: Silicon Compatible GaN Power Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2015.2444911

Publication URI: http://dx.doi.org/10.1109/ted.2015.2444911

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 8

ISSN: 00189383