Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors (2014)
Attributed to:
Silicon Compatible GaN Power Electronics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4904923
Publication URI: http://dx.doi.org/10.1063/1.4904923
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 24
ISSN: 10897550