Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors (2014)

First Author: Zaidi Z

Attributed to: Silicon Compatible GaN Power Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4904923

Publication URI: http://dx.doi.org/10.1063/1.4904923

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 24

ISSN: 10897550