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Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements (2017)

First Author: Mu Y

Attributed to: High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tns.2016.2633549

Publication URI: http://dx.doi.org/10.1109/tns.2016.2633549

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Nuclear Science

Issue: 1