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Local carrier recombination and associated dynamics in m -plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence (2016)

First Author: Zhu T

Attributed to: Study of semi-polar and non-polar nitride based structures for opto-electronic device applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4971366

Publication URI: http://dx.doi.org/10.1063/1.4971366

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 23