Extremely low surface recombination in 1 O cm n-type monocrystalline silicon (2016)
Attributed to:
Improved surface passivation for semiconductor solar cells
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssr.201600307
Publication URI: http://dx.doi.org/10.1002/pssr.201600307
Type: Journal Article/Review
Parent Publication: physica status solidi (RRL) - Rapid Research Letters
Issue: 1