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Improved Channel Mobility by Oxide Nitridation for N-Channel MOSFET on 3C-SiC(100)/Si (2016)

First Author: Li F

Attributed to: Vehicle Electrical Systems Integration (VESI) funded by UKRI

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.858.667

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.858.667

Type: Journal Article/Review

Parent Publication: Materials Science Forum