Enhancement-mode metal-insulator-semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V (2015)
Attributed to:
Silicon Compatible GaN Power Electronics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.7567/apex.8.036502
Publication URI: http://dx.doi.org/10.7567/apex.8.036502
Type: Journal Article/Review
Parent Publication: Applied Physics Express
Issue: 3
ISSN: 18820786