Backside illuminated SPAD image sensor with 7.83µm pitch in 3D-stacked CMOS technology (2016)
Attributed to:
UK Quantum Technology Hub in Quantum Enhanced Imaging
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/iedm.2016.7838372
Publication URI: http://dx.doi.org/10.1109/iedm.2016.7838372
Type: Conference/Paper/Proceeding/Abstract