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Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors (2015)

First Author: Esro M

Attributed to: Materials World Network-- Ultrafast Switching of Phase Change Materials: Combined Nanosecond and Nanometer Exploration funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4921262

Publication URI: http://dx.doi.org/10.1063/1.4921262

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 20