Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors (2015)
Attributed to:
Materials World Network-- Ultrafast Switching of Phase Change Materials: Combined Nanosecond and Nanometer Exploration
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4921262
Publication URI: http://dx.doi.org/10.1063/1.4921262
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 20