The Impact of Oxygen Flow Rate on the Oxide Thickness and Interface Trap Density in 4H-SiC MOS Capacitors (2014)

First Author: Thomas S
Attributed to:  Underpinning Power Electronics 2012: Devices Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.806.149

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.806.149

Type: Journal Article/Review

Parent Publication: Materials Science Forum