The Impact of Oxygen Flow Rate on the Oxide Thickness and Interface Trap Density in 4H-SiC MOS Capacitors (2014)
Attributed to:
Underpinning Power Electronics 2012: Devices Theme
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.806.149
Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.806.149
Type: Journal Article/Review
Parent Publication: Materials Science Forum