Stable Phosphorus Passivated SiO<sub>2</sub>/4H-SiC Interface Using Thin Oxides (2014)
Attributed to:
Underpinning Power Electronics 2012: Devices Theme
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.806.139
Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.806.139
Type: Journal Article/Review
Parent Publication: Materials Science Forum