Stable Phosphorus Passivated SiO<sub>2</sub>/4H-SiC Interface Using Thin Oxides (2014)

First Author: Sharma Y

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.806.139

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.806.139

Type: Journal Article/Review

Parent Publication: Materials Science Forum