Zero reverse recovery in SiC and GaN Schottky diodes: A comparison (2016)
Attributed to:
Underpinning Power Electronics 2012: Devices Theme
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ispsd.2016.7520780
Publication URI: http://dx.doi.org/10.1109/ispsd.2016.7520780
Type: Conference/Paper/Proceeding/Abstract