Novel 4H-SiC bipolar junction transistor (BJT) with improved current gain (2015)

First Author: Daranagama T
Attributed to:  Underpinning Power Electronics 2012: Devices Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/cobep.2015.7420235

Publication URI: http://dx.doi.org/10.1109/cobep.2015.7420235

Type: Conference/Paper/Proceeding/Abstract