Instability of phosphorous doped SiO2 in 4H-SiC MOS capacitors at high temperatures (2016)

First Author: Idris M
Attributed to:  Underpinning Power Electronics 2012: Devices Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4969050

Publication URI: http://dx.doi.org/10.1063/1.4969050

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 21