Instability of phosphorous doped SiO2 in 4H-SiC MOS capacitors at high temperatures (2016)
Attributed to:
Underpinning Power Electronics 2012: Devices Theme
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4969050
Publication URI: http://dx.doi.org/10.1063/1.4969050
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 21