A 100-W 94% efficient 6-MHz SiC class E inverter with a sub 2-W GaN resonant gate drive for IPT (2016)

First Author: Yates D
Attributed to:  Underpinning Power Electronics 2012: Components Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/wpt.2016.7498801

Publication URI: http://dx.doi.org/10.1109/wpt.2016.7498801

Type: Conference/Paper/Proceeding/Abstract