Stress Engineering During the Fabrication of InGaN/GaN Vertical Light Emitting Diodes for Reducing the Quantum Confined Stark Effect (2016)
Attributed to:
Lighting the Future
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2016.2614435
Publication URI: http://dx.doi.org/10.1109/ted.2016.2614435
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 12