Evaluation of growth methods for the heteroepitaxy of non-polar ( 11 2 ¯ 0 ) GAN on sapphire by MOVPE (2014)
Attributed to:
Materials World Network to Optimize the Growth of InGaN Quantum Dots within High Quality Optical Micro-Cavities
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2014.09.009
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2014.09.009
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth