Hole trapping in amorphous HfO2 and Al2O3 as a source of positive charging (2017)

First Author: Strand J
Attributed to:  Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2017.05.012

Publication URI: http://dx.doi.org/10.1016/j.mee.2017.05.012

Type: Journal Article/Review

Parent Publication: Microelectronic Engineering