Thin Al1-x Ga x As0.56Sb0.44 diodes with extremely weak temperature dependence of avalanche breakdown. (2017)
Attributed to:
Next generation avalanche photodiodes: realising new potentials using nm wide avalanche regions
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1098/rsos.170071
PubMed Identifier: 28573013
Publication URI: http://europepmc.org/abstract/MED/28573013
Type: Journal Article/Review
Volume: 4
Parent Publication: Royal Society open science
Issue: 5
ISSN: 2054-5703