Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements (2017)
Attributed to:
ZnO MESFETs for application to Intelligent Windows
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2017.05.043
Publication URI: http://dx.doi.org/10.1016/j.mee.2017.05.043
Type: Journal Article/Review
Parent Publication: Microelectronic Engineering