Hole density and acceptor-type defects in MBE-grown GaSb 1- x Bi x (2017)

First Author: Segercrantz N
Attributed to:  Nitride Photovoltaic Materials for Full Spectrum Utilization funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/aa779a

Publication URI: http://dx.doi.org/10.1088/1361-6463/aa779a

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 29