Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czochralski-grown silicon Powerful recombination centers in n-type Cz-Si (2017)

First Author: Vaqueiro-Contreras M

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssr.201700133

Publication URI: http://dx.doi.org/10.1002/pssr.201700133

Type: Journal Article/Review

Parent Publication: physica status solidi (RRL) - Rapid Research Letters

Issue: 8