Unfolding the band structure of GaAsBi. (2017)

First Author: Maspero R
Attributed to:  Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-648x/aa50d7

PubMed Identifier: 28008883

Publication URI: http://europepmc.org/abstract/MED/28008883

Type: Journal Article/Review

Volume: 29

Parent Publication: Journal of physics. Condensed matter : an Institute of Physics journal

Issue: 7

ISSN: 0953-8984