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Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling (2017)

First Author: Chan C

Attributed to: Silicon-Silicon Carbide (Si/SiC) Power Devices for high temperature, hostile environment applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2017.2719898

Publication URI: http://dx.doi.org/10.1109/ted.2017.2719898

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 9