Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources (2017)
Attributed to:
Molecular Beam Epitaxy of Boron Nitride and Graphene layers and heterostructures.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2017.01.007
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2017.01.007
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth