Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping (2017)

First Author: Sedghi N
Attributed to:  Mechanisms and Control of Resistive Switching in Dielectrics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4991879

Publication URI: http://dx.doi.org/10.1063/1.4991879

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 9