📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! Tell us what works, what doesn't, and how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community. Please send your feedback to gateway@ukri.org by 11 August 2025.

Probing the Critical Region of Conductive Filament in Nanoscale HfO 2 Resistive-Switching Device by Random Telegraph Signals (2017)

First Author: Chai Z

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2017.2742578

Publication URI: http://dx.doi.org/10.1109/ted.2017.2742578

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 10