Experimental and Simulation Study of Silicon Nanowire Transistors Using Heavily Doped Channels (2017)

First Author: Georgiev V

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tnano.2017.2665691

Publication URI: http://dx.doi.org/10.1109/tnano.2017.2665691

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Nanotechnology

Issue: 5