Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite Al x Ga 1-x N (2017)

First Author: Novikov S
Attributed to:  Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.pcrysgrow.2017.04.001

Publication URI: http://dx.doi.org/10.1016/j.pcrysgrow.2017.04.001

Type: Journal Article/Review

Parent Publication: Progress in Crystal Growth and Characterization of Materials

Issue: 2