Experimental evaluation of interfaces using atomic-resolution high angle annular dark field (HAADF) imaging. (2012)
Attributed to:
III-V MOSFETs for Ultimate CMOS
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.ultramic.2011.10.015
PubMed Identifier: 22343667
Publication URI: http://europepmc.org/abstract/MED/22343667
Type: Journal Article/Review
Volume: 114
Parent Publication: Ultramicroscopy
ISSN: 0304-3991