Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors (2011)

First Author: Martinez A
Attributed to:  Quantum Simulations of Future Solid State Transistors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2011.2157929

Publication URI: http://dx.doi.org/10.1109/ted.2011.2157929

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 8

ISSN: 0018-9383