Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu2O Thin Films. (2017)

First Author: Han S
Attributed to:  The Physics and Engineering of Oxide Semiconductors for Large-Area CMOS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1038/s41598-017-05893-x

PubMed Identifier: 28720754

Publication URI: http://europepmc.org/abstract/MED/28720754

Type: Journal Article/Review

Volume: 7

Parent Publication: Scientific reports

Issue: 1

ISSN: 2045-2322