Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu2O Thin Films. (2017)
Attributed to:
The Physics and Engineering of Oxide Semiconductors for Large-Area CMOS
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1038/s41598-017-05893-x
PubMed Identifier: 28720754
Publication URI: http://europepmc.org/abstract/MED/28720754
Type: Journal Article/Review
Volume: 7
Parent Publication: Scientific reports
Issue: 1
ISSN: 2045-2322