Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors. (2017)
Attributed to:
Integration of Novel Materials in Spintronic Devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1038/s41598-017-17290-5
PubMed Identifier: 29203820
Publication URI: http://europepmc.org/abstract/MED/29203820
Type: Journal Article/Review
Volume: 7
Parent Publication: Scientific reports
Issue: 1
ISSN: 2045-2322