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Highly stable amorphous zinc tin oxynitride thin film transistors under positive bias stress (2017)

First Author: Niang K

Attributed to: The Physics and Engineering of Oxide Semiconductors for Large-Area CMOS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5004514

Publication URI: http://dx.doi.org/10.1063/1.5004514

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 12