Investigation of resistance switching in SiO x RRAM cells using a 3D multi-scale kinetic Monte Carlo simulator. (2018)
Attributed to:
Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-648x/aaa7c1
PubMed Identifier: 29334362
Publication URI: http://europepmc.org/abstract/MED/29334362
Type: Journal Article/Review
Volume: 30
Parent Publication: Journal of physics. Condensed matter : an Institute of Physics journal
Issue: 8
ISSN: 0953-8984