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Investigation of resistance switching in SiO x RRAM cells using a 3D multi-scale kinetic Monte Carlo simulator. (2018)

First Author: Sadi T

Attributed to: Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-648x/aaa7c1

PubMed Identifier: 29334362

Publication URI: http://europepmc.org/abstract/MED/29334362

Type: Journal Article/Review

Volume: 30

Parent Publication: Journal of physics. Condensed matter : an Institute of Physics journal

Issue: 8

ISSN: 0953-8984