High mobility In 0.75 Ga 0.25 As quantum wells in an InAs phonon lattice (2018)

First Author: Chen C
Attributed to:  Nanoelectronic Based Quantum Physics- Technology and Applications. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-648x/aaa947

PubMed Identifier: 29350626

Publication URI: http://europepmc.org/abstract/MED/29350626

Type: Journal Article/Review

Parent Publication: Journal of Physics: Condensed Matter

Issue: 10

ISSN: 0953-8984