Intrinsic electron trapping in amorphous oxide. (2018)

First Author: Strand J
Attributed to:  Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6528/aaa77a

PubMed Identifier: 29332843

Publication URI: http://europepmc.org/abstract/MED/29332843

Type: Journal Article/Review

Volume: 29

Parent Publication: Nanotechnology

Issue: 12

ISSN: 0957-4484