Molecular beam epitaxial growth of zinc blende MgS on GaAs (2 1 1)B substrates (2018)
Attributed to:
Applications of Epitaxial lift off technology for II-VI semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2017.12.043
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2017.12.043
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth