The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes (2017)
Attributed to:
Lighting the Future
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4986434
Publication URI: http://dx.doi.org/10.1063/1.4986434
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 23
ISSN: 0021-8979