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Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs (2017)

First Author: Chatterjee I

Attributed to: High Performance Buffers for RF GaN Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2016.2645279

Publication URI: http://dx.doi.org/10.1109/ted.2016.2645279

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 3