"Leaky Dielectric" Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs (2017)
Attributed to:
High Performance Buffers for RF GaN Electronics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2017.2706090
Publication URI: http://dx.doi.org/10.1109/ted.2017.2706090
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 7