Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO 2 RRAM and Their Impacts on RTN Amplitude Distribution (2018)
Attributed to:
Mechanisms and Control of Resistive Switching in Dielectrics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2018.2792221
Publication URI: http://dx.doi.org/10.1109/ted.2018.2792221
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 3