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Towards substrate engineering of graphene-silicon Schottky diode photodetectors. (2018)

First Author: Selvi H

Attributed to: Instrument to identify defects and impurities in wide band gap semiconductors via excited states funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1039/c7nr09591k

PubMed Identifier: 29388650

Publication URI: http://europepmc.org/abstract/MED/29388650

Type: Journal Article/Review

Volume: 10

Parent Publication: Nanoscale

Issue: 7

ISSN: 2040-3364